Confovis Introduces IR-SIM for Non-Destructive Optical Inspection of Bonded Wafer Interfaces
As advanced packaging technologies push the limits of semiconductor manufacturing, the need for non-destructive inspection methods inside bonded wafer stacks becomes more pressing than ever.
Confovis now addresses this inspection challenge by introducing IR-SIM — an infrared evolution of its Structured Illumination Microscopy (SIM) technology — enabling precise, non-invasive analysis of hidden bond interfaces.
Structured Illumination Microscopy Reaches Infrared Spectrum
Confovis has expanded its metrology portfolio with Infrared Structured Illumination Microscopy (IR-SIM), an evolution of the company’s patented SIM technology that now operates at 1300nm. By moving into the infrared, IR-SIM turns silicon transparent and enables non-destructive imaging inside stacked or bonded wafers.
“IR-SIM extends our optical inspection capabilities into domains where other inspection and metrology systems come to their limits,” said Frank Thielert, Business Development of Confovis. “It opens new possibilities for bonding metrology to see the root cause of voids and the analysis of buried structures in 2.5D/3D technologies and MEMS.”
Seeing Through Silicon
IR-SIM projects phase shifted patterns in the infrared range and reconstructs the bonded interface topography from the modulated return signal. At these wavelengths silicon’s absorption drops sharply, allowing the buried interface between two wafers to be inspected for voids, particles or any other type of defect while the device remains intact.
“Early adopters report that IR-SIM gives additional information to scanning acoustic microscopy for interface defect detection, while delivering the quantitative metrology they need for statistical process control” added Frank Thielert.
Metrology and Defect Inspection In One Step
Building on the WAFERinspect platform, IR-SIM combines 3D/2D metrology with AI-assisted defect inspection in a single optical path. Users can generate true-to-scale height maps of bond layer topography while automatically flagging defects for statistical process control.
The WAFERinspect series features a unique approach with area scanning Structured Illumination Microscopy for high-precision, non-contact 3D measurements without moving optical components. In the same beam path, it enables image-based defect inspection with various light frequencies. This provides exceptional flexibility, stability, repeatability and accuracy for defect detection, classification, and dimensional measurement.
For more information: www.confovis.com
